Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device (110) includes: semiconductor layers; a multilayered structural body (40); and a light emitting portion (30). The multilayered structural body (40) is provided between the semiconductor layers, and includes a first layer (41) and a second layer (42) including In. The light emitting portion (30) is in contact with the multilayered structural body (40) between the multilayered structural body (30) and p-type semiconductor layer (20), and includes barrier layers (31) and a well layer (32) including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer (42). An average lattice constant of the multilayered structural body (40) is larger than that of the n-type semiconductor layer (10). Difference between the average lattice constant of the multilayered structural body (40) and that of the light emitting portion (30) is less than difference between that of the multilayered structural body (40) and that of the n-type semiconductor layer (10).