| 摘要 |
PROBLEM TO BE SOLVED: To enable the side wall of a layer formed in contact with an insulating film to be selectively restored. SOLUTION: The Y-direction width of the lower part of a first conductive layer 6 becomes narrower than the Y-direction width of the upper part, because the side wall of the first conductive layer 6 is subjected to etching or the reaction product of the etching is removed. Thereafter, an outer wall 6b is formed through a selective growth technology in the region where the side wall is removed. COPYRIGHT: (C)2008,JPO&INPIT
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