发明名称 RFID device with memory unit having memristor characteristics
摘要 An RFID device may ensure a stable sensing margin by employing a ReRAM. In an embodiment the RFID includes: a radio signal transceiver configured to transmit/receive a radio signal to/from an external reader; a digital unit configured to detect a command signal from an output of the radio signal transceiver and output a control signal corresponding to the command signal; and a memory unit configured to perform a read or write operation in response to the control signal, the memory unit including a resistive switch device (RSD) having memristor characteristics.
申请公布号 US8113437(B2) 申请公布日期 2012.02.14
申请号 US20100792437 申请日期 2010.06.02
申请人 KANG HEE BOK;HYNIX SEMICONDUCTOR, INC. 发明人 KANG HEE BOK
分类号 G06K19/06 主分类号 G06K19/06
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