| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving reliability and characteristics. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a Ti layer 26 so as to contact a predetermined region on a semiconductor layer 11; forming an Al layer 28 on the Ti layer 26 after the step of forming the Ti layer 26; performing heat treatment after the step of forming the Al layer 28; removing the Al layer 28 after the step of performing the heat treatment; and forming an Au layer 29 on the Ti layer 26 on the predetermined region of the semiconductor layer 11 after the step of removing the Al layer 28. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012028641(A) |
申请公布日期 |
2012.02.09 |
| 申请号 |
JP20100167386 |
申请日期 |
2010.07.26 |
| 申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS INC |
发明人 |
NISHI SHINKO |
| 分类号 |
H01L21/28;H01L21/338;H01L29/417;H01L29/778;H01L29/812 |
主分类号 |
H01L21/28 |
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