| 摘要 |
A method of manufacturing a light emitting element (5) comprises: obtaining a semiconductor wafer (100) by laminating a GaN semiconductor on a sapphire substrate (1) with a C face of said sapphire substrate treated as the main face thereof, and positioning a plurality of rectangular-shaped light emitting element units (2) in lines in a horizontal direction such that the width of a horizontal partition region (4b) is narrower than the width of a vertical partition region (4a) and N electrodes of the light emitting elements (2) are positioned on at least one side of the vertical partition region (4a) sides; and disposing cutting origins on the -C face of the sapphire substrate, and partitioning same to obtain light emitting elements (5). The method comprises the steps of preparing the semiconductor wafer (100) and partitioning the semiconductor wafer (100). In the wafer partitioning step, the partitioning in the vertical partitioning region (4a) is carried out with a cutting origin being a line location that is shifted a prescribed distance from the center line of the vertical partitioning region (4a) in the width direction toward one side thereof in the width direction. |
