| 摘要 |
<P>PROBLEM TO BE SOLVED: To control the height of an element isolation film of a semiconductor device. <P>SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an element isolation film on a substrate; forming a first oxide film on the substrate; removing the first oxide film in a second region and an upper portion of the element isolation film in the second region by performing wet etching using a resist pattern as a mask with an opening, covering the first region and leaving the second region exposed; forming a second oxide film on the substrate in the second region; injecting ions to the substrate; removing the first oxide film in the first region and the second oxide film in the second region by performing wet etching; forming a first gate insulating film on the substrate; removing the first gate insulating film in the first region and an upper portion of the element isolation film in the first region by performing wet etching using a resist pattern as a mask with an opening, covering the second region and leaving the first region exposed; and forming a second gate insulating film on the substrate in the first region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
