PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

Provided is a process for producing a semiconductor device which can exhibit properties thereof steadily and has high quality. The process for producing a semiconductor device comprises the steps of: preparing a silicon carbide layer (2-4) having a main surface; removing a part of the silicon carbide layer (2-4) to form a groove (16) on the main surface; and removing a part of the side wall of the groove (16) by thermal etching.