SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device having: a transistor section which is provided with a plurality of transistor units that are adjacent to each other; and a diode which is adjacent to the transistor section. Each of the transistor units is provided with a first conductivity type drift region to be a drain region, a second conductivity type well region formed on the drift region, a gate electrode formed inside of a first trench, and a first conductivity type source region formed on the well region by being in contact with the first trench. The source region provided in the transistor unit adjacent to the diode is formed only on the side of other adjacent transistor unit by having the first trench as a boundary. Alternatively, in the source region provided in the transistor unit adjacent to the diode, the width of the source region formed on the diode side is smaller than that of the source region formed on the side of other adjacent transistor unit.