| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device, capable of inhibiting deterioration in laser characteristics and damages to the semiconductor laser element due to the correction of warpage from occurring, and equalizing the temperature distributions of generated heat in the semiconductor laser element. SOLUTION: The semiconductor laser device 40 is provided with a semiconductor laser element 50 having warpage in the direction of the resonator, a (p) side electrode 115 formed on the surface of the concave side of the warpage of the semiconductor layer element 50, and a base 70 to which the convex side of the warpage of the semiconductor layer element 50. The semiconductor laser element 50 is so fixed to the base 70 that the distance between the convex side of the warpage and the base 70 varies with the warpage of the semiconductor laser element 50 along the direction of the resonator. Furthermore, a wire bonding portion 115a is provided in the vicinity of a portion of the (p) side electrode 115, in the vicinity of a region where the distance is largest among the distances between the convex side of the warpage of the semiconductor laser element 50 and the base 70. COPYRIGHT: (C)2009,JPO&INPIT
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