| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has reduced contact resistance between a transparent conductive film and a semiconductor layer and stable light emission characteristics. <P>SOLUTION: A semiconductor device 100 has a substrate 110, an n-type semiconductor layer 130, a semiconductor light emitting layer 140 and a p-type semiconductor layer 150 in this order. The semiconductor device 100 further has an insulating film 170 located above of a part of the p-type semiconductor layer 150 in a non-exposed portion 101, a first transparent conductive film 161 located above the substantially whole part of the p-type semiconductor layer 150 at a portion in the non-exposed portion 101 where the insulating film 170 is not located, and a second transparent conductive film 164 located above the insulating film 170 and the first transparent conductive film 161. The semiconductor device 100 further has an n-type electrode 190 which is located above the n-type semiconductor layer 130 in an exposed portion 102 and electrically connected to the n-type semiconductor layer 130, and a p-type electrode 180 which is located above the insulating film 170 on the second transparent conductive film 164 and electrically connected to the p-type semiconductor layer 150. <P>COPYRIGHT: (C)2012,JPO&INPIT |
