| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulated-gate semiconductor device having a structure that can achieve an insulated gate bipolar transistor (IGBT) with lower loss by reducing the resistance of a channel portion. <P>SOLUTION: A p-type channel layer 19 is selectively formed in a plurality of regions between a trench 16 and an adjacent trench 16 of a surface layer portion of a semiconductor substrate 14. In the surface layer portion of the semiconductor substrate 14, an N+ type emitter region 22 is formed in a first region 20 between a trench 16 and an adjacent trench 16 in which the channel layer 19 is not formed. With such a channelless structure in which the channel layer 19 is not formed in the first region 20 that is a channel portion where the emitter region 22 is formed, the width of a region through which carriers pass is widened and a channel resistance in a wall portion on a gate side is reduced. Therefore, an on-voltage of an IGBT element is reduced, and a low-loss IGBT element can be achieved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
