发明名称 TREATMENT METHOD FOR SILICON SUBSTRATE, AND MANUFACTURING METHOD OF LIQUID INJECTION HEAD
摘要 PROBLEM TO BE SOLVED: To provide a treatment method for a silicon substrate in which a recessed portion or groove can be formed on the silicon substrate relatively easily, and a manufacturing method of a liquid injection head. SOLUTION: A protective film 51 is formed on a surface of the silicon substrate, a surface layer of the protective film 5 is processed by irradiation with laser light to form a processed portion 52 in an area where a recessed portion 115 is formed, and the silicon substrate where the protective film 51 having the processed portion 52 is dipped in an etchant to form the recessed portion 115 on the silicon substrate. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009059958(A) 申请公布日期 2009.03.19
申请号 JP20070226831 申请日期 2007.08.31
申请人 SEIKO EPSON CORP 发明人 TAKAI TOMOYUKI
分类号 H01L21/306;B41J2/16 主分类号 H01L21/306
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