| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has RESURF structure that can actualize high breakdown voltage without adding a diffusion step at high temperature for a long time and improve reliability, and to provide a method of manufacturing the same. SOLUTION: A semiconductor device 1 includes: a semiconductor element region including a first semiconductor region 2B and a second semiconductor region 5 provided on a main surface of a substrate 2 at the central part thereof, being apart from each other and having first conductivity and a third semiconductor region 4 provided between the first semiconductor region 2B and the second semiconductor region 5 and having second conductivity opposite to the first conductivity; a fourth semiconductor region 41 provided on a main surface of the substrate 2 at the peripheral part thereof, connected to the third semiconductor region 4, manufactured together with the third semiconductor region 4 in the same manufacturing process, and having the conductivity same as that of the third semiconductor region 4; and trenches 42 made on the main surface of the fourth semiconductor region 41 and having a depth smaller than a junction depth of the fourth semiconductor region 41. COPYRIGHT: (C)2009,JPO&INPIT |
