| 摘要 |
<p>A manufacturing method of a gate electrode in a semiconductor device is provided to prevent the increase of a gate resistance by protecting the permeation of a boron of a MOS transistor. A field oxide film is on a semiconductor substrate(10) including a gate insulating layer(30) and a non-crystal silicon(40) to define an active area and an element isolation area. A nickel is deposited on the surface of the non-crystal silicon through a sputtering mode, and NiSi is formed by performing a thermal process. The NiSi is formed by making the noncrystal silicon react to the nickel. A gate electrode is patterned by progressing a photolithography and an etching process. A spacer(70) is formed through an LDD(lightly doped drain) ion injection process. A source/drain ion injection process and a thermal process are performed.</p> |
