发明名称 |
Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device |
摘要 |
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask. |
申请公布号 |
US8110417(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20100885882 |
申请日期 |
2010.09.20 |
申请人 |
YANG JONG IN;KIM YU SEUNG;SONG SANG YEOB;LEE SI HYUK;KIM TAE HYUNG;SAMSUNG LED CO., LTD. |
发明人 |
YANG JONG IN;KIM YU SEUNG;SONG SANG YEOB;LEE SI HYUK;KIM TAE HYUNG |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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