| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory having a storage device which can perform reset by using a reset gate and has a resistance variable layer.SOLUTION: A semiconductor device comprises: a columnar phase change layer 501; a reset gate insulation film 502 which surrounds the columnar phase change layer; and a reset gate 503 which surrounds the reset gate insulation film. The columnar phase change layer and the reset gate are electrically insulated from each other. The reset gate extends in a direction perpendicular to a standing direction of the columnar phase change layer. |
