发明名称 SOFT PROGRAM OF A NON-VOLATILE MEMORY BLOCK
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of soft programming a non-volatile memory blocks. <P>SOLUTION: The method of soft programming a non-volatile memory blocks includes erasing bits and identifying bits that have been over-erased by the erasing. A first subset of the bits that have been over-erased are soft programmed. The results of soft programming the first subset of bits is measured. An initial voltage condition from a plurality of possible voltage conditions is selected based on the results from soft programming the first subset of bits. The results of soft programming a second subset of bits is measured. The soft programming applies the initial voltage condition to the bits in the second subset of bits. The second subset comprises bits that are still over-erased when the step of selecting occurs. The result is that the soft programming for the second subset may begin at a more optimum point than the case of the soft program for the second subset for quickly achieving the needed soft programming to bring all of the bits within the desired erase condition. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012022767(A) 申请公布日期 2012.02.02
申请号 JP20110153682 申请日期 2011.07.12
申请人 FREESCALE SEMICONDUCTOR INC 发明人 JOHN S CHOI;HE ZHEN;MICHAEL A SADE
分类号 G11C16/02 主分类号 G11C16/02
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