| 摘要 |
<p>In the disclosed solid-state imaging device, a pixel cell is provided with a photodiode, a transfer transistor, a charge conversion unit, a reset transistor, and an amplifying transistor. Wiring is provided to the pixel cell, and a switching unit is connected to the wiring. By means of the provision of the wiring, parasitic capacitance is formed between the wiring and the charge conversion unit. The switching unit has the ability to selectively switch the electric potential state of the wiring between a ground potential and a potential that tracks a signal line potential. When the accumulated charge (Q) of the photodiode is large, the switching unit is switched to the grounded side, and when the accumulated charge (Q) of the photodiode is low, the switching unit is switched to the signal line side.</p> |
