| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which supports high controllability in a medium-density plasma region effective for fine processing and uniformity corresponding to a larger diameter of a wafer at the same time. <P>SOLUTION: The plasma processing apparatus comprises a vacuum processing chamber exhausted by evacuation means, gas supply means for supplying gas to the vacuum processing chamber, microwave power supply means for creating plasma, a dielectric microwave transmission window provided in the vacuum processing chamber, a substrate stage on which a wafer is placed, a high-frequency bias power supply for applying high-frequency bias power to the wafer through the substrate stage, and a solenoid coil and a yoke for generating a magnetic field in the vacuum processing chamber. The central portion of the dielectric microwave transmission window protrudes with respect to another portion by approximately one fourth of a wavelength of a microwave in the dielectric. <P>COPYRIGHT: (C)2012,JPO&INPIT |
