| 摘要 |
<p>The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a compound semiconductor family of the type group II-Ill-N or II-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAIN, ZnAIGaN, ZnAIInN,, ZnAIGaInN or MgInN. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. For example figure 4 (shown) gives the measured photoluminescence emission spectroscopic output for ZnInN semiconductor nanocrystals, in which the reacton time is controlled. The effect of the reaction time is to lower the peak wavelength of photoluminescence intensity. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated, with reported photoluminescence quantum yields in the range 10% to greater than 50%. A method is also included whereby the semiconductor nanoparticles are produced by reacting at least a source of a group II element, at least a source of a source of a group III element and at least a source of nitrogen. For example ZnInN is formed by heating at 250deg C Indium iodide, sodium amide, hexadecane thiol, zinc stearate and diphenyl ether for up to an hour. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.</p> |
