发明名称 Thin film transistor with semiconductor precursor and liquid crystal display having the same
摘要 A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.
申请公布号 US8106389(B2) 申请公布日期 2012.01.31
申请号 US20090607991 申请日期 2009.10.28
申请人 CHENG HSIANG-YUAN;CHIANG SHIN-CHUAN;LAI SHIH-HSIANG;YU CHIN-CHIH;CHUANG BOR-CHUAN;TAIWAN TFT LCD ASSOCIATION;CHUNGHWA PICTURE TUBES, LTD.;AU OPTRONICS CORPORATION;HANNSTAR DISPLAY CORPORATION;CHI MEI OPTOELECTRONICS CORPORATION;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;TPO DISPLAYS CORP. 发明人 CHENG HSIANG-YUAN;CHIANG SHIN-CHUAN;LAI SHIH-HSIANG;YU CHIN-CHIH;CHUANG BOR-CHUAN
分类号 H01L29/12 主分类号 H01L29/12
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