发明名称 |
Systems and Devices Including Multi-Gate Transistors and Methods of Using, Making, and Operating the Same |
摘要 |
Disclosed are methods of forming transistors. In one embodiment, the transistors are formed by forming a plurality of elliptical bases in a substrate and forming fins form the elliptical bases. The transistors are formed within the fin such that they may be used as access devices in a memory array.
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申请公布号 |
US2012018789(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113183337 |
申请日期 |
2011.07.14 |
申请人 |
JUENGLING WERNER;MICRON TECHNOLOGY, INC. |
发明人 |
JUENGLING WERNER |
分类号 |
H01L27/108;H01L27/088;H01L29/78 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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