发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A memory cell array includes memory strings arranged in a first direction. Word-lines and select gate lines extend in a second direction perpendicular to the first direction. The select gate line also extends in the second direction. The word-lines have a first line width in the first direction and arranged with a first distance therebetween. The select gate line includes a first interconnection in the first direction, the first interconnection having a second line width larger than the first line width, and a second interconnection extending from an end portion of the first interconnection, the second interconnection having a third line width the same as the first line width. A first word-line adjacent to the select gate line is arranged having a second distance to the second interconnection, the second distance being (4N+1) times the first distance (N being an integer of 1 or more).
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申请公布号 |
US2012020158(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113187000 |
申请日期 |
2011.07.20 |
申请人 |
OZAKI TOHRU;NOGUCHI MITSUHIRO;MAEKAWA HIDEAKI;MASHITA HIROMITSU;TAGUCHI TAKAFUMI;KOBAYASHI KAZUHITO;MUKAI HIDEFUMI;NITTA HIROYUKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
OZAKI TOHRU;NOGUCHI MITSUHIRO;MAEKAWA HIDEAKI;MASHITA HIROMITSU;TAGUCHI TAKAFUMI;KOBAYASHI KAZUHITO;MUKAI HIDEFUMI;NITTA HIROYUKI |
分类号 |
G11C16/04;H01L21/78 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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