| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element that has a buffer layer that can cover an underlayer substantially uniformly, and has a high in-plane uniformity of a photoelectric conversion efficiency. <P>SOLUTION: In a photoelectric conversion element 1, a lower electrode layer 20, a photoelectric conversion semiconductor layer 30 whose main component is at least one kind of chalcopyrite-structure compound semiconductors comprised of a group-Ib element, a group-IIIb element, and a group-VIb element, a buffer layer 40, and a translucent conductive layer 50 are laminated on a substrate 10 sequentially. The buffer layer 40 includes a ternary compound comprised of a metal not containing cadmium, oxygen, and sulphur, and has a carbonyl ion C on a surface 40s on the translucent conductive layer 50 side of the buffer layer 40. <P>COPYRIGHT: (C)2012,JPO&INPIT |
