| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of sufficiently securing a thickness of an insulating film arranged between a contact plug and an implanted gate electrode, and a method for manufacturing the same. <P>SOLUTION: The semiconductor device comprises: a gate electrode 41 implanting a part of a recess part 14 formed on a semiconductor substrate 11 via a gate insulating film 16; an insulting film 18 implanting the recess part 14 so as to cover an upper end face 41a of the gate electrode 41; an impurity diffusion region 43 formed on a main surface 11a of the semiconductor substrate 11 positioned at a side surface 14a of the recess part 14; a silicon layer 21 covering an upper surface 43a of the impurity diffusion region 43; and a contact plug 34 which is installed in first and second interlayer insulating films 23, 31 formed on the main surface 11a of the semiconductor substrate 11, contacting with an upper surface 21a of the silicon layer 21, and in which a lower edge 34b is arranged between the upper surface 21a of the silicon layer 21 and an upper surface 18a of the insulating film 18. <P>COPYRIGHT: (C)2012,JPO&INPIT |
