| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deterioration diagnosis method and deterioration diagnosis device for a semiconductor power module, capable of accurately and easily diagnosing deterioration due to detachment or cracking at a wire junction. <P>SOLUTION: In a deterioration diagnosis method for diagnosing deterioration of a junction between a semiconductor chip and a bonding wire constituting a semiconductor power module, a plurality of semiconductor chips are connected in series to measure a total value of saturation voltages of the respective semiconductor chips in 'on' state. When the total value exceeds a threshold, the junction is judged to be deteriorated. Alternatively, the junction constitutes a first junction, and another junction between a dummy substrate and the bonding wire, which has a larger difference in linear expansion coefficient than the difference in linear expansion coefficient between the semiconductor chip and the bonding wire, separately constitutes a second junction. The first junction and the second junction are connected in series to pass a main circuit current, so that deterioration of the first junction is estimated from a deterioration state of the second junction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
