发明名称 |
Photodetector isolation in image sensors |
摘要 |
Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench. |
申请公布号 |
US8101450(B1) |
申请公布日期 |
2012.01.24 |
申请号 |
US20100966238 |
申请日期 |
2010.12.13 |
申请人 |
DOAN HUNG Q.;STEVENS ERIC G.;GUIDASH ROBERT M.;OMNIVISION TECHNOLOGIES, INC. |
发明人 |
DOAN HUNG Q.;STEVENS ERIC G.;GUIDASH ROBERT M. |
分类号 |
H01L21/00;H01L21/8238 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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