| 摘要 |
<p>The invention relates to a semiconductor device comprising: a crystalline semiconductor substrate (1) having a front face (1a) and a rear face (1b); a front passivation layer (3) placed on the front face (1a) of the substrate (1); a rear passivation layer (2) placed on the rear face (1b) of the substrate (1); a first metallization zone (10) placed on the rear passivation layer (2) and designed for collecting electrons; a second metallization zone designed for collecting holes, comprising: a surface portion (11) placed on the rear passivation layer (2); and an internal portion (12) passing through the rear passivation layer (2) and forming, in the substrate (1), a region in which the concentration of electron acceptors is greater than the rest of the substrate (1). The invention also relates to a module of photovoltaic cells using this device and to a process for manufacturing this device.</p> |
