| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a III-nitride semiconductor laser element which has high resistance against catastrophic optical damage (COD). <P>SOLUTION: The III-nitride semiconductor laser element 11 has a laser waveguide extending in a direction of a cross line of an m-n plane with a semipolar plane 17a. On both ends of the laser waveguide, first and second end faces 26, 28 serving as a laser resonators are provided. The first and second end faces 26, 28 intersect the m-n plane (or a-n plane). A c+ axis vector forms an acute angle with a waveguide vector WV. The waveguide vector WV corresponds to a direction from the second end face 28 to the first end face 26. A thickness of a first dielectric multilayer film 43a on the first end face 26 (C+ side) is thinner than a thickness of a second dielectric multilayer film 43b on the second end face 28 (C- side). <P>COPYRIGHT: (C)2012,JPO&INPIT |
