发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF REUSING SAME
摘要 A nonvolatile semiconductor memory device and a method of reusing the same that allow a good use of the semiconductor device without degrading characteristics even when reused. The semiconductor memory device comprises information holding means for holding information that indicates an operation mode of said memory cell array, a decoder for generating, to said memory cell array, a selection signal to designate at least a read address of said memory cell array in accordance with an address signal that comprises plural bits; and mode setting means for fixing a logical value of at least one bit of said plural bits of said address signal in accordance with the information held by said information holding means, and supplying said address signal, on which fixing of the logical value is effected, to said decoder.
申请公布号 US2012014178(A1) 申请公布日期 2012.01.19
申请号 US201113179206 申请日期 2011.07.08
申请人 NAGASHIMA YUJI;KURAMORI BUNSHO;TANIKAWA HIROYUKI;OKI SEMICONDUCTOR CO., LTD. 发明人 NAGASHIMA YUJI;KURAMORI BUNSHO;TANIKAWA HIROYUKI
分类号 G11C11/4195;G11C11/4197 主分类号 G11C11/4195
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