发明名称 |
Method for manufacturing semiconductor device and storage medium |
摘要 |
On an etching target film formed on a substrate, a three-layer resist is laminated. This three-layer resist includes an organic film and a resist film developed into a resist pattern. Through the resist pattern, the organic film is etched into a mask pattern through which the etching target film will be etched. The organic film is etched with plasma which is obtained by exciting a process gas containing carbon dioxide and hydrogen to the plasma state. This scheme makes it possible to form a high perpendicularity mask pattern in the organic film. |
申请公布号 |
US8097534(B2) |
申请公布日期 |
2012.01.17 |
申请号 |
US20080222442 |
申请日期 |
2008.08.08 |
申请人 |
OGAWA SHUHEI;HIROTSU SHIN;TOKYO ELECTRON LIMITED |
发明人 |
OGAWA SHUHEI;HIROTSU SHIN |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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