发明名称 Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film
摘要 Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.
申请公布号 US8097397(B2) 申请公布日期 2012.01.17
申请号 US20070441514 申请日期 2007.09.13
申请人 TAKAYAMA TOSHIKAZU;ISHIDUKA KEITA;HADA HIDEO;YOKOI SHIGERU;TOKYO OHKA KOGYO CO., LTD. 发明人 TAKAYAMA TOSHIKAZU;ISHIDUKA KEITA;HADA HIDEO;YOKOI SHIGERU
分类号 G03F7/00;G03F7/004;G03F7/26;G03F7/40 主分类号 G03F7/00
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