发明名称 |
Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film |
摘要 |
Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.
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申请公布号 |
US8097397(B2) |
申请公布日期 |
2012.01.17 |
申请号 |
US20070441514 |
申请日期 |
2007.09.13 |
申请人 |
TAKAYAMA TOSHIKAZU;ISHIDUKA KEITA;HADA HIDEO;YOKOI SHIGERU;TOKYO OHKA KOGYO CO., LTD. |
发明人 |
TAKAYAMA TOSHIKAZU;ISHIDUKA KEITA;HADA HIDEO;YOKOI SHIGERU |
分类号 |
G03F7/00;G03F7/004;G03F7/26;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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