| 摘要 |
Magnetic random access memory (MRAM) cell (1) with a thermally assisted switching writing procedure comprising a magnetic tunnel junction (2) containing at least a first magnetic layer (23), a second magnetic layer (21), an insulating layer (22) being disposed between the first and a second magnetic layers (23, 21), the cell (1) further comprising a select transistor (3) and a current line (8) electrically connected to the junction (2); the current line (8) being characterized by having : a first function for passing a first portion of current (31) for heating the junction (2), and a second function for passing a second portion of current (41) in order to switch the magnetization of the first magnetic layer (23). |
