PHASE CHANGE MEMORY DEVICE HAVING BUFFER LAYER

摘要

PURPOSE: A phase change memory device which includes a buffer layer is provided to use a buffer layer arranged in the upper part of a phase change material film as a tantalum layer, thereby minimizing interfacial dissipated power with a phase change material. CONSTITUTION: A first interlayer insulating film(110) is arranged on a semiconductor substrate(100). A diode(120) is arranged within the first interlayer insulating film as a switching element. A second interlayer insulating film(130) is arranged in a semiconductor substrate product in which the diode is arranged. A phase change material film(150) is arranged in the upper part of the second interlayer insulating film. A tantalum layer(160) is arranged in the upper part of the phase change material film as a buffer layer. An upper electrode(170) is arranged in the upper part of the tantalum layer.