发明名称 RADIATION DETECTOR AND MANUFACTURING METHOD THEREFOR
摘要 <p>The disclosed radiation detector has a radiation-sensitive detection layer provided on a substrate. Said detection layer is a polycrystalline film with an average grain size less than or equal to a pixel pitch. A polycrystalline film comprising for example CdZnTe (cadmium zinc telluride) is formed (CdZnTe film (A)) and actively doped with chlorine at a film chlorine concentration within the range 1-10 ppm (wt), or preferably, 3.1 ppm (wt). The use of a detection layer that is a polycrystalline film with an average grain size less than or equal to the pixel pitch allows the disclosed radiation detector to acquire images that have good inter-pixel characteristics (spatial resolution, sensitivity, and the like). Also, temporal fluctuations are decreased in size, improving detection characteristics related to response characteristics. As a result, detection characteristics are improved.</p>
申请公布号 WO2012004913(A1) 申请公布日期 2012.01.12
申请号 WO2011JP02002 申请日期 2011.04.04
申请人 SHIMADZU CORPORATION;TOKUDA, SATOSHI;TANABE, KOICHI;YOSHIMUTA, TOSHINORI;KISHIHARA, HIROYUKI;KAINO, MASATOMO;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI 发明人 TOKUDA, SATOSHI;TANABE, KOICHI;YOSHIMUTA, TOSHINORI;KISHIHARA, HIROYUKI;KAINO, MASATOMO;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI
分类号 G01T1/24;H01L31/09 主分类号 G01T1/24
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