发明名称 SUBSTRATE FOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A light emitting device and a manufacturing method thereof are provided to significantly reduce a TD(Threading Dislocation) defect in semiconductor layer growth, thereby improving internal quantum efficiency. CONSTITUTION: A semiconductor laminated structure is arranged in the upper part of a substrate. The semiconductor laminated structure comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. A plurality of unevenness patterns is arranged in the upper surface of the substrate. Each of the multiple unevenness patterns is arranged in a projected shape with respect to the substrate. The distance between the centers of two adjacent unevenness patterns among the multiple unevenness patterns is fixed.
申请公布号 KR20120004048(A) 申请公布日期 2012.01.12
申请号 KR20100064698 申请日期 2010.07.06
申请人 SEOUL OPTO DEVICE CO., LTD. 发明人 SUH, DUK IL;KIM, YE SEUL;KIM, JAE MOO;OH, SANG HYUN;LEE, KEUM JU;KIM, KYOUNG WAN;YOON, YEO JIN
分类号 H01L33/22;H01L33/20 主分类号 H01L33/22
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