| 摘要 |
<P>PROBLEM TO BE SOLVED: To repair a dielectric constant of a layer of silicon-containing dielectric material. <P>SOLUTION: The present invention relates to a method for repairing the dielectric constant of the layer of silicon-containing dielectric material having a first dielectric constant and at least one top surface, and the first dielectric constant of the silicon-containing dielectric material has increased up to a second dielectric constant. The method includes a step of bringing at least the one surface of the silicon-containing dielectric material and a silicon-containing fluid into contact with each other, and a step of exposing the at least one top surface of the layer of silicon-containing dielectric material to an energy source selected from the group comprising ultraviolet irradiation, heat, and an electron beam, the layer of silicon-containing dielectric material having a third dielectric constant smaller than the second dielectric constant after the layer of silicon-containing dielectric material is exposed to the energy source. <P>COPYRIGHT: (C)2012,JPO&INPIT |
