发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE: A plasma processing apparatus is provided to discharge residual gas through the upper part of a chamber, thereby improving the uniformity of plasma generated in a plasma generation electrode. CONSTITUTION: A plasma processing apparatus(1000) comprises a chamber(1300) and a plasma generation electrode including a substrate support stand(1100) and a plurality of linear members(111). The substrate support stand is arranged in the lower part of the inside of the chamber in order to support a substrate(S). One or more parts among the plasma generation electrode and a susceptor are transferred following the movement of the substrate. The plasma generation electrode is arranged in the upper part of the substrate support stand by facing the substrate support stand. The plasma generation electrode comprises linear electrode members which are arranged side by side. The linear electrode members have a pipe shape which has a gas injection hole(112) in the lower part of the linear electrode members. The chamber accepts the substrate support stand and plasma generation electrode. An exhaust pipe(1400) is arranged in the central part of the chamber.
申请公布号 KR101104638(B1) 申请公布日期 2012.01.12
申请号 KR20100068757 申请日期 2010.07.16
申请人 TES CO., LTD. 发明人 CHUNG, WOO YOUNG;KO, HEE JIN
分类号 H05H1/34 主分类号 H05H1/34
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