发明名称 |
ATOMIC LAYER DEPOSITION APPARATUS |
摘要 |
A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided. |
申请公布号 |
US2012006265(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113235855 |
申请日期 |
2011.09.19 |
申请人 |
CHIN BARRY L.;MAK ALFRED W.;LEI LAWRENCE CHUNG-LAI;XI MING;CHUNG HUA;LAI KEN KAUNG;BYUN JEONG SOO |
发明人 |
CHIN BARRY L.;MAK ALFRED W.;LEI LAWRENCE CHUNG-LAI;XI MING;CHUNG HUA;LAI KEN KAUNG;BYUN JEONG SOO |
分类号 |
C23C16/455;C23C16/44;C23C16/458 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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