SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.