Manufacturing method of a semiconductor substrate comprising at least a buried cavity,申请号EP20020425742-传众专利搜索

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发明名称	Manufacturing method of a semiconductor substrate comprising at least a buried cavity
摘要
申请公布号	EP1427010(B1)	申请公布日期	2012.01.11
申请号	EP20020425742	申请日期	2002.11.29
申请人	STMICROELECTRONICS SRL	发明人	RENNA, CROCIFISSO MARCO ANTONIO;LA MAGNA, LUIGI;LORENTI, SIMONA;COFFA, SALVATORE
分类号	H01L21/764;B81B1/00;B81B3/00;B81C1/00;H01L21/302;H01L21/306;H01L21/3063;H01L21/762;H01L29/06;H04R19/00	主分类号	H01L21/764
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