BURIED GATE ELECTRODE OF TRANSISTOR AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A buried gate electrode of a transistor and a forming method thereof are provided to prevent an interface oxidation of a silicon pattern by protecting the interface between a silicon pattern and an adhesive layer with a capping layer. CONSTITUTION: An adhesive layer is formed on a silicon layer with a gap area. A tungsten film filling the gap area is formed on the adhesive layer. The upper side of the silicon layer is exposed and a tungsten pattern(62p) filling the gap area and an adhesive pattern(60p) are formed. A capping layer(64) is formed on the front of a substrate(10) with the tungsten pattern and the adhesive pattern. A silicon pattern(58p) is formed by successively patterning the capping layer and the silicon layer.