| 摘要 |
PURPOSE: A chalcogenide alloy polishing method is provided to restrict a foreign material which is fortuitously created by containing water which is selected between deionized water and distilled water in a chemical mechanical polishing composition. CONSTITUTION: A substrate which includes chalcogenide phase change alloy is provided. The chalcogenide phase change alloy is germanium-antimony-tellurium alloy. A chemical mechanical polishing composition having PH level less than 2 to 7 is provided. A chemical mechanical polishing pad is provided. The substrate is polished by the chemical mechanical polishing pad and the chemical mechanical polishing composition. The chalcogenide phase change alloy is selectively or non-selectively eliminated.
|
