FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND FABRICATING SYSTEM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device and a manufacturing system of the semiconductor device are provided to improve reliability of the semiconductor device by executing a lithographic process using the thickness of a dielectric layer. CONSTITUTION: A pre-etching layer and a dielectric layer are successively formed(S10). The dielectric layer is a reflecting prevention layer. The thickness of the dielectric layer is measured(S20). A photo-resist film is formed on the dielectric layer(S30). A lithography process is executed using a thickness measurement result of the dielectric layer(S40). Exposing energy or exposing time in the lithography process is controlled according to the thickness measurement result. A dielectric layer pattern and a pre-etching layer pattern are formed(S50).