| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of directly bonding front surfaces (11, 21) of two substrates (1, 2) for use in electronics, optics, or optoelectronics including at least one of the two substrates comprises a semiconductor material layer (1, 13, 2, 20, 23) extending over the front surface or proximity of the front surface. <P>SOLUTION: The present application focuses on a method comprising the steps of: performing adjustment heating by exposing at least front surfaces (11, 21) of substrates containing semiconductor, or, if both substrates contain semiconductor, exposing at least the front surface (11, 21) of one of the two substrates, to a temperature from about 900°C to about 1200°C in a gas atmosphere containing hydrogen and/or argon for a duration of at least 30 sec. in advance of bonding; and directly bonding together the front surfaces (11, 21) of two substrates (1, 2) for direct bonding. <P>COPYRIGHT: (C)2012,JPO&INPIT |
