| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor in which a threshold voltage can be shifted to a positive direction without injecting a fixed charge into a gate insulator, and a display device with the thin film transistor. <P>SOLUTION: A fixed charge accumulation layer 50 made from an insulation material is provided on a channel region 40A. A fixed charge controlling electrode 80 is provided on the top surface side of the fixed charge accumulation layer 50. When the fixed charge controlling electrode 80 is given a positive(+) potential and a drain electrode 60D is given a negative(-) potential and a source electrode 60S is made electrically floating or only the fixed charge controlling electrode 80 is given a positive(+) potential, a hot electron accelerated in a channel electric field or a hot electron generated by collision ionization is injected from the channel region 40A near the drain electrode 60D to the fixed charge accumulation layer 50, and accumulated in the fixed charge accumulation layer 50. Therefore, a potential in a channel region 40 A is controlled, and a threshold voltage Vth is shifted to a positive direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
