| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing degradation of long-term reliability due to water infiltration from a fuse opening. <P>SOLUTION: A resistor is provided on a semiconductor substrate through a field oxide film, and a first metal wiring is provided on the resistor, and an intermetallic interlayer film with good flatness having a hygroscopic film is formed on the first metal wiring. Exposure of the hygroscopic film is prevented by forming a trimming fuse for the resistor on the intermetallic interlayer film which has the hygroscopic film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
