CLEANING COMPOSITION AND METHOD OF FORMING SEMICONDUCTOR PATTERN USING THE SAME

摘要

PURPOSE: A cleaning composition is provided to effectively remove etching residues in short time without the damage of metal membrane and insulating membrane. CONSTITUTION: A cleaning composition comprises 10-70wt% ether compound, 0.1-2wt% fluorine-based compound etchant, 0.1-3wt% anticorrosive agent and extra deionized water. The forming method of a semiconductor pattern comprises: a step of forming insulating membrane on the top of the substrate in which some structures are formed; a step of forming damascene pattern on the insulating layer; a step of cleaning the substrate by the cleaning composition; a step of forming metal layer for filling the damascene pattern; and a step of forming metal wire by planarizing the metal layer to expose the top of the insulating layer.