发明名称 Deep-eutectic melt growth of nitride crystals
摘要 In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.
申请公布号 US8088220(B2) 申请公布日期 2012.01.03
申请号 US20080126334 申请日期 2008.05.23
申请人 SLACK GLEN A.;SCHUJMAN SANDRA B.;CRYSTAL IS, INC. 发明人 SLACK GLEN A.;SCHUJMAN SANDRA B.
分类号 C30B19/00;C03B19/06 主分类号 C30B19/00
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