发明名称 |
Ultra-thin ohmic contacts for p-type nitride light emitting devices |
摘要 |
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2. |
申请公布号 |
US8089090(B2) |
申请公布日期 |
2012.01.03 |
申请号 |
US20050191111 |
申请日期 |
2005.07.27 |
申请人 |
RAFFETTO MARK;BHARATHAN JAYESH;HABERERN KEVIN;BERGMANN MICHAEL;EMERSON DAVID;IBBETSON JAMES;LI TING;CREE, INC. |
发明人 |
RAFFETTO MARK;BHARATHAN JAYESH;HABERERN KEVIN;BERGMANN MICHAEL;EMERSON DAVID;IBBETSON JAMES;LI TING |
分类号 |
H01L29/22;H01L33/42 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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